| 型号 | 制造商 | 描述 | 操作 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | FIXED IND 4.7UH 750MA 260 MOHM | 搜索 查看资料 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | FIXED IND 4.7UH 750MA 260 MOHM | 搜索 查看资料 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | FIXED IND 4.7UH 750MA 260 MOHM | 搜索 查看资料 |
| 型号 | 制造商 | 描述 | 操作 |
| CIG21L4R7MNE [更多] | Samsung Semiconductor | Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 0805 Embossed T/R - Tape and Reel (Alt: CIG21L4R7MNE) | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| CIG21L4R7MNE [更多] | Samsung Semiconductor | Unidentified | 搜索 |
| CIG21L4R7MNE [更多] | Samsung Semiconductor | Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 260mOhm DCR 0805 T/R | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 260mOhm DCR 0805 T/R | 搜索 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 260mOhm DCR 0805 T/R | 搜索 |
| 型号 | 制造商 | 描述 | 操作 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 260mOhm DCR 0805 T/R | 搜索 |
| CIG21L4R7MNE [更多] | Samsung Electro-Mechanics | Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 750mA 260mOhm DCR 0805 T/R | 搜索 |